FDMS4435BZ
制造商:onsemi产品种类:MOSFET技术:Si安装风格:SMD/SMT封装 / 箱体:Power-56-8晶体管极性:P-Channel通道数量:1 ChannelVds-漏源极击穿电压:30 VId-连续漏极电流:9 ARds On-漏源导通电阻:20 mOhmsVgs - 栅极-源极电压:- 25 V, + 25 VVgs th-栅源极阈值电压:3 VQg-栅极电荷:47 nC最小工作温度:- 55 C最大工作温度:+ 150 C
货号：
38832
描述
| onsemi | ||
| 产品种类: | MOSFET | |
| Si | ||
| SMD/SMT | ||
| Power-56-8 | ||
| P-Channel | ||
| 1 Channel | ||
| 30 V | ||
| 9 A | ||
| 20 mOhms | ||
| - 25 V, + 25 V | ||
| 3 V | ||
| 47 nC | ||
| - 55 C | ||
| + 150 C |
