NTH4L160N120SC1
制造商:onsemi产品种类:MOSFET技术:SiC安装风格:Through Hole封装 / 箱体:TO-247-4晶体管极性:N-Channel通道数量:1 ChannelVds-漏源极击穿电压:1.2 kVId-连续漏极电流:17.3 ARds On-漏源导通电阻:224 mOhmsVgs - 栅极-源极电压:- 15 V, + 25 VVgs th-栅源极阈值电压:4.3 VQg-栅极电荷:34 nC最小工作温度:- 55 C最大工作温度:+ 175 C
货号：
38751
描述
| onsemi | ||
| 产品种类: | MOSFET | |
| SiC | ||
| Through Hole | ||
| TO-247-4 | ||
| N-Channel | ||
| 1 Channel | ||
| 1.2 kV | ||
| 17.3 A | ||
| 224 mOhms | ||
| - 15 V, + 25 V | ||
| 4.3 V | ||
| 34 nC | ||
| - 55 C | ||
| + 175 C |
