NTH4LN067N65S3H
制造商:onsemi产品种类:MOSFET技术:Si安装风格:Through Hole晶体管极性:N-Channel通道数量:1 ChannelVds-漏源极击穿电压:650 VId-连续漏极电流:40 ARds On-漏源导通电阻:67 mOhmsVgs - 栅极-源极电压:- 30 V, + 30 VVgs th-栅源极阈值电压:4 VQg-栅极电荷:80 nC最小工作温度:- 55 C最大工作温度:+ 150 C
货号：
38750
描述
| onsemi | ||
| 产品种类: | MOSFET | |
| Si | ||
| Through Hole | ||
| N-Channel | ||
| 1 Channel | ||
| 650 V | ||
| 40 A | ||
| 67 mOhms | ||
| - 30 V, + 30 V | ||
| 4 V | ||
| 80 nC | ||
| - 55 C | ||
| + 150 C |
