FCH029N65S3-F155
制造商:onsemi产品种类:MOSFET技术:Si安装风格:Through Hole封装 / 箱体:TO-247-3晶体管极性:N-Channel通道数量:1 ChannelVds-漏源极击穿电压:650 VId-连续漏极电流:75 ARds On-漏源导通电阻:29 mOhmsVgs - 栅极-源极电压:- 30 V, + 30 VVgs th-栅源极阈值电压:4.5 VQg-栅极电荷:201 nC最小工作温度:- 55 C最大工作温度:+ 150 C
货号:
38748
描述
onsemi | ||
产品种类: | MOSFET | |
Si | ||
Through Hole | ||
TO-247-3 | ||
N-Channel | ||
1 Channel | ||
650 V | ||
75 A | ||
29 mOhms | ||
- 30 V, + 30 V | ||
4.5 V | ||
201 nC | ||
- 55 C | ||
+ 150 C |