FDD86110
制造商:onsemi产品种类:MOSFET技术:Si安装风格:SMD/SMT封装 / 箱体:DPAK-3晶体管极性:N-Channel通道数量:1 ChannelVds-漏源极击穿电压:100 VId-连续漏极电流:12.5 ARds On-漏源导通电阻:10.2 mOhmsVgs - 栅极-源极电压:- 20 V, + 20 VVgs th-栅源极阈值电压:2 VQg-栅极电荷:35 nC最小工作温度:- 55 C最大工作温度:+ 150 C
货号：
38726
描述
| onsemi | ||
| 产品种类: | MOSFET | |
| Si | ||
| SMD/SMT | ||
| DPAK-3 | ||
| N-Channel | ||
| 1 Channel | ||
| 100 V | ||
| 12.5 A | ||
| 10.2 mOhms | ||
| - 20 V, + 20 V | ||
| 2 V | ||
| 35 nC | ||
| - 55 C | ||
| + 150 C |
