FDMS3660S
制造商:onsemi产品种类:MOSFET技术:Si安装风格:SMD/SMT封装 / 箱体:Power-56-8晶体管极性:N-Channel通道数量:2 ChannelVds-漏源极击穿电压:30 VId-连续漏极电流:13 A, 30 ARds On-漏源导通电阻:8 mOhms, 1.8 mOhmsVgs - 栅极-源极电压:- 20 V, + 20 V, - 12 V, + 12 VVgs th-栅源极阈值电压:1.1 VQg-栅极电荷:29 nC, 87 nC最小工作温度:- 55 C最大工作温度:+ 150 C
货号：
38722
描述
| onsemi | ||
| 产品种类: | MOSFET | |
| Si | ||
| SMD/SMT | ||
| Power-56-8 | ||
| N-Channel | ||
| 2 Channel | ||
| 30 V | ||
| 13 A, 30 A | ||
| 8 mOhms, 1.8 mOhms | ||
| - 20 V, + 20 V, - 12 V, + 12 V | ||
| 1.1 V | ||
| 29 nC, 87 nC | ||
| - 55 C | ||
| + 150 C |
