NTH4L045N065SC1
产品种类:MOSFET技术:Si安装风格:Through Hole封装 / 箱体:TO-247-4晶体管极性:N-Channel通道数量:1 ChannelVds-漏源极击穿电压:650 VId-连续漏极电流:55 ARds On-漏源导通电阻:50 mOhmsVgs - 栅极-源极电压:- 8 V, + 22 VVgs th-栅源极阈值电压:4.3 VQg-栅极电荷:105 nC最小工作温度:- 55 C最大工作温度:+ 175 C
货号：
38688
描述
| 产品种类: | MOSFET | |
| Si | ||
| Through Hole | ||
| TO-247-4 | ||
| N-Channel | ||
| 1 Channel | ||
| 650 V | ||
| 55 A | ||
| 50 mOhms | ||
| - 8 V, + 22 V | ||
| 4.3 V | ||
| 105 nC | ||
| - 55 C | ||
| + 175 C |
