RBN40H125S1FPQ-A0#CB0
制造商:Renesas Electronics产品种类:IGBT 晶体管技术:Si封装 / 箱体:TO-247A-3安装风格:Through Hole配置:Single集电极—发射极最大电压 VCEO:1.25 kV集电极—射极饱和电压:1.8 V栅极/发射极最大电压:- 20 V, 20 V在25 C的连续集电极电流:80 APd-功率耗散:319 W最大工作温度:+ 175 C
货号：
31543
描述
| Renesas Electronics | ||
| 产品种类: | IGBT 晶体管 | |
| Si | ||
| TO-247A-3 | ||
| Through Hole | ||
| Single | ||
| 1.25 kV | ||
| 1.8 V | ||
| - 20 V, 20 V | ||
| 80 A | ||
| 319 W | ||
| + 175 C |
